Electrostatic Tuning of the Proximity-Induced Exchange Field in EuS/Al Bilayers
Abstract:
The development of a magnetic analog of the ubiquitous field-effect transistor (FET) has been a long term goal of the materials research community. Indeed, the electrical manipulation of magnetism is central to the future development spintronic applications. In contrast to semiconducting FET’s, which use gate-controlled electric fields to modulate a device’s charge carrier concentration, a magnetic FET would use a gate to modulate the magnetism of a thin magnetic film. Recently, gating strategies have been employed to modify the magnetic properties in complex multiferroics and ferromagnetic semiconductors. In these studies a magnetoelectric (ME) effect typically arises from the strain induced by the electric field and/or from the modulation of the carrier density itself. In this Letter we focus on ME effects that arise at the interface between a ferromagnetic insulator (FI) and an elemental paramagnet (PM). In a bilayer configuration in which a PM film is in intimate contact with the FI film, an exchange interaction between local magnetic moments in the FI and PM conduction electrons gives rise to a large effective internal field in the PM layer. This effective field, which only manifests itself through a Zeeman splitting of the PM conduction electrons, is commonly known as the exchange field Hex . Here we show that the exchange field in the Al component of EuS/Al bilayers can be modulated with relatively small perpendicular electric fields. Using a MOSFET-type geometry we demonstrate that an exchange field of the order of several tesla can be modulated by tens of percent with gate voltages ∼ ±10 V. We exploit this effect to electrostatically tune the superconducting transition temperature of the Al layer.
Time: Oct 30, Tuesday, noon.
Location: Rm. 435, Nicholson Hall.
Foods and drinks will be provided.